triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 1 0.2 - 18 ghz downconverter TGC1452-EPU key features and performance 0.25um phemt technology 0.2-18 ghz rf/lo frequency range dc-4 ghz if frequency range nominal conversion gain of 12 db bias 3-5v @ 17-24 ma chip dimensions 1.0 mm x 1.0 mm primary applications satellite systems point-to-point radio the triquint TGC1452-EPU is a double balanced mmic mixer design using triquint?s proven 0.25 um power phemt process to support a variety of communication system applications including satellite. the double balanced design consists of an integrated gilbert cell mixer core, rf/lo baluns, differential combiner, and output driver amplifier. the tgc1452 may be operated from a single +3 v to +5 v power supply with typical current draw of 24 ma. the lo power requirement is -5 dbm to 0 dbm. the tgc1452 may also be operated as an up-converter. the tgc1452 requires a minimum of off-chip components employing only a 0.01 uf off-chip bypass capacitor for the power supply line. no additional off- chip rf matching components are required. each device is 100% rf tested on-wafer to ensure performance compliance. the device is available in chip form. note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. rf in lo in if out lsb, if = 501mhz, 0dbm lo -40 -30 -20 -10 0 10 20 0 2 4 6 8 1012141618 rf frequency (ghz) gain and isolation (db) +5v-24ma +3v-17ma conversion gain lo-if isolation lsb, rf = 4001mhz, 0dbm lo -4 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 if frequency (ghz) conversion gain (db) +5v-24ma +3v-17ma january 3, 2001
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 2 recommended maximum ratings symbol parameter value notes v + positive supply voltage 8 v i + positive supply current 80 ma 3/ p d power dissipation 0.64 w p in input continuous wave power 14 dbm t ch operating channel temperature 150 c 1/, 2 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these ratings apply to each individual fet 2/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ total current for the entire mmic electrical characteristics note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. on-wafer rf probe characteristics (t a = 25 c 5 c) symbol parameter test condition vd=5v, lo=-5dbm limit min nom max units g conversion gain f rf = 2.0 ghz f lo = 2.501 ghz 10 15 - db db ilo lo isolation f lo = 2.501 ghz - -30 -25 db idc dc current 20 25 35 ma rf-probe performance summary ,, , 0 100 200 300 400 500 600 -45-42-39-36-33-30-27-24-21-18-15 lo to if isolation (db) number of devices 0 200 400 600 800 1000 1200 13.0 13.8 14.6 15.4 16.2 17.0 conversion gain (db) number of devices TGC1452-EPU
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. typical performance measured +5v measured +3v measured parameter units 2ghz 10ghz 18ghz 2ghz 10ghz 18ghz conversion gain 1 db 14.8 9.5 5.5 12.0 7.5 2.5 output p 1db 1 dbm -2.0 -2.3 -3.7 -7.5 -8.5 -10.0 ssb noise figure 2 db 9.8 12.5 18.5 10.2 13.0 19.0 gain temp. coeff. 1 db/ 0.017 0.020 0.030 0.015 0.023 0.032 lo isolation db -30 -35 -28 -35 -35 -28 rf return loss db -18-9 -8-18-9 -8 if return loss db -12 -16 -18 -16 -21 -24 lo return loss db -20 -10 -7 -19 -10 -7 supply current ma 24 17 1. if = 501 mhz 2. if = 201 mhz mechanical characteristics 0.000 1.000 0.000 1.000 0.590 0.955 0.545 0.637 1 2 4 3 units: millimeters thickness: 0.1016 (ref. only) chip size tolerance: +/- 0.0508 bond pad 1 (rf input) 0.150x0.100 bond pad 2 (vd) 0.100x0.100 bond pad 3 (rf output) 0.150x0.100 bond pad 4 (lo input) 0.150x0.100 TGC1452-EPU
triquint semiconductor texas : (972)994 8465 fax (972)994 8504 web: www.triquint.com advance product information 4 chip assembly and bonding diagram reflow process assembly notes: ? = ausn (80/20) solder with limited exposure to temperatures at or above 300 c ? = alloy station or conveyor furnace with reducing atmosphere ? = no fluxes should be utilized ? = coefficient of thermal expansion matching is critical for long-term reliability ? = storage in dry nitrogen atmosphere component placement and adhesive attachment assembly notes: ? = vacuum pencils and/or vacuum collets preferred method of pick up ? = avoidance of air bridges during placement ? = force impact critical during auto placement ? = organic attachment can be used in low-power applications ? = curing should be done in a convection oven; proper exhaust is a safety concern ? = microwave or radiant curing should not be used because of differential heating ? = coefficient of thermal expansion matching is critical interconnect process assembly notes: ? = thermosonic ball bonding is the preferred interconnect technique ? = force, time, and ultrasonics are critical parameters ? = aluminum wire should not be used ? = discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire ? = maximum stage temperature: 200 c gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. rf input rf output lo input 0.01 = == = f vd TGC1452-EPU
|
